Add to ORKGThe reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by comparing the low frequency noise characteristics at low temperature of p-channel devices before and after positive F-N stress. The RNO devices were found to have a better noise performance after F-N stress and were also found to have less interface state generation due to the warm-up process. However, the creation of negative fixed charge in RNO devices has a severe effect on the threshold voltage. I
DoctorThis thesis describes the reliability study of MOSFETs with high-k dielectrics using low-frequ...
In this paper we analyze LF noise in trench-gate power MOSFETs to investigate the effect of negative...
International audienceThe low-frequency (LF) noise behavior of Fully Depleted (FD) Ultrathin Buried ...
The reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by compar...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f ...
Hafnium based materials are the leading high dielectric constant (high-k) candidates to replace conv...
International audienceIn this paper, UTBOX nMOSFETs with different gate dielectrics have been studie...
Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. T...
Nitridation of gate dielectric in n-channel Si-MOSFETs was performed by rapid thermal annealing in e...
International audienceWe have investigated gate and drain current noise on strained-channel n-MOSFET...
The International Technology Roadmap for Semiconductors outlines the need for high-K dielectric base...
Silicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated wit...
Temperature stability of off-state gate current (Ig) for n-MOSFET's with reoxidized nitrided oxide (...
In this paper we analyze LF noise in trench-gate power MOSFETs to investigate the effect of negative...
DoctorThis thesis describes the reliability study of MOSFETs with high-k dielectrics using low-frequ...
In this paper we analyze LF noise in trench-gate power MOSFETs to investigate the effect of negative...
International audienceThe low-frequency (LF) noise behavior of Fully Depleted (FD) Ultrathin Buried ...
The reliability of oxide and reoxidized-nitrided oxide (RNO) gate dielectrics was examined by compar...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f ...
Hafnium based materials are the leading high dielectric constant (high-k) candidates to replace conv...
International audienceIn this paper, UTBOX nMOSFETs with different gate dielectrics have been studie...
Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. T...
Nitridation of gate dielectric in n-channel Si-MOSFETs was performed by rapid thermal annealing in e...
International audienceWe have investigated gate and drain current noise on strained-channel n-MOSFET...
The International Technology Roadmap for Semiconductors outlines the need for high-K dielectric base...
Silicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated wit...
Temperature stability of off-state gate current (Ig) for n-MOSFET's with reoxidized nitrided oxide (...
In this paper we analyze LF noise in trench-gate power MOSFETs to investigate the effect of negative...
DoctorThis thesis describes the reliability study of MOSFETs with high-k dielectrics using low-frequ...
In this paper we analyze LF noise in trench-gate power MOSFETs to investigate the effect of negative...
International audienceThe low-frequency (LF) noise behavior of Fully Depleted (FD) Ultrathin Buried ...