Photoconductive polycrystalline mercuric iodide deposited on flat panel thin film transistor (TFT) arrays is one of the best candidates for direct digital X-ray detectors for radiographic and fluoroscopic medical imaging. The mercuric iodide is vacuum deposited by Physical Vapor Deposition (PVD). This deposition technology has been scaled up to the 20cmX25cm size required in common medical imaging applications. A TFT array with a pixel pitch of 127 microns is used for these imagers. In addition to successful imager scale up, non-TFT based detectors were developed in order to improve analysis methods of the mercuric iodide photoconductor itself. These substrates consist of an array of palladium or ITO stripes on a glass substrate. Following ...
A new detector system based on mercuric iodide technology was designed and constructed specifically ...
Mercuric Iodide is the most promising of all semiconductor materials currently under investigation f...
This paper reports on a-Si:H n-i-p photodiodes on PEN substrates with performance characteristics su...
Photoconductive polycrystalline mercuric iodide coated on amorphous silicon flat panel thin film tra...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
The ability of Mercuric Iodide (HgI2) to function as a highly efficient radiation detector at room t...
The signal properties of polycrystalline mercuric iodide (HgI2) film detectors, under irradiation co...
Mercuric iodide (HgI2) detectors were studied as potential gamma-ray spectrometers that can operate ...
Mercuric iodide (HgI2) detectors were studied as potential gamma-ray spectrometers that can operate ...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
"Active matrix, flat-panel x-ray imagers based on a-Si:H thin-film transistors offer many advantages...
Polycrystalline HgI2 thick film detectors are among the leading semiconductor materials to be used a...
The recent technological developments and availability of mercuric iodide detectors have made their ...
A new detector system based on mercuric iodide technology was designed and constructed specifically ...
Mercuric Iodide is the most promising of all semiconductor materials currently under investigation f...
This paper reports on a-Si:H n-i-p photodiodes on PEN substrates with performance characteristics su...
Photoconductive polycrystalline mercuric iodide coated on amorphous silicon flat panel thin film tra...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
The ability of Mercuric Iodide (HgI2) to function as a highly efficient radiation detector at room t...
The signal properties of polycrystalline mercuric iodide (HgI2) film detectors, under irradiation co...
Mercuric iodide (HgI2) detectors were studied as potential gamma-ray spectrometers that can operate ...
Mercuric iodide (HgI2) detectors were studied as potential gamma-ray spectrometers that can operate ...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
Mercuric Iodide in its tetragonal form has received a lot of attention for many years as a prospecti...
"Active matrix, flat-panel x-ray imagers based on a-Si:H thin-film transistors offer many advantages...
Polycrystalline HgI2 thick film detectors are among the leading semiconductor materials to be used a...
The recent technological developments and availability of mercuric iodide detectors have made their ...
A new detector system based on mercuric iodide technology was designed and constructed specifically ...
Mercuric Iodide is the most promising of all semiconductor materials currently under investigation f...
This paper reports on a-Si:H n-i-p photodiodes on PEN substrates with performance characteristics su...