Add to ORKGsubstrates having doping levels between 1.82 and 2.10 x 1019 cm-3 (ρ = 0.010-0.011 Ω-cm). Radius of curvature measurement of the epilayer/substrate bicrystals indicates the existence of compressive stresses of magnitudes between 250 and 400 MPa. Transmission electron microscopy (TEM) examination of the epilayer/substrate bicrystals, after they were annealed at 1150°C in nitrogen for thirty minutes, revealed bands of stacking faults (SFs) confined within the epilayers that hav
Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition...
This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axi...
Abstract. Optical methods were used to measure thermal deformations in commercial 4H- and 6H-SiC waf...
We have measured thermoplastic deformation in as-received, single-side polished, 4H-SiC wafers and a...
4H-SiC samples are bent in compression mode at 550°C and 620°C. The introduced-defects are identifie...
Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by anneali...
4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introdu...
International audienceA transmission electron microscopy (TEM) study on the generation of stacking f...
Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they ca...
A high density of planar defects is observed by scanning and transmission electron microscopy in wa...
Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates i...
Having superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applicat...
This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-orient...
The impact of doping on the lattice constants of 4H-silicon carbide (4H-SiC) is an important materia...
Development of thin films has allowed for important improvements in optical, electronic and electrom...
Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition...
This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axi...
Abstract. Optical methods were used to measure thermal deformations in commercial 4H- and 6H-SiC waf...
We have measured thermoplastic deformation in as-received, single-side polished, 4H-SiC wafers and a...
4H-SiC samples are bent in compression mode at 550°C and 620°C. The introduced-defects are identifie...
Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by anneali...
4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introdu...
International audienceA transmission electron microscopy (TEM) study on the generation of stacking f...
Basal Plane Dislocations (BPD) in SiC are thought to cause degradation of bipolar devices as they ca...
A high density of planar defects is observed by scanning and transmission electron microscopy in wa...
Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates i...
Having superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applicat...
This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-orient...
The impact of doping on the lattice constants of 4H-silicon carbide (4H-SiC) is an important materia...
Development of thin films has allowed for important improvements in optical, electronic and electrom...
Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition...
This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axi...
Abstract. Optical methods were used to measure thermal deformations in commercial 4H- and 6H-SiC waf...