Comparing Crystallography and Ferroelectric Properties of a-Axis Oriented Bi3:25La0:75Ti3O12 versus Non-c-Axis Oriented SrBi2Ta2O9 Thin Films on Si(100)

Growth, structure and properties of a-axis oriented ferroelectric Bi3:25La0:75Ti3O12 thin films on SrRuO3-electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi2Ta2O9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi2Ta2O9 films suffer from certain inherent crystallographic properties of the films, whereas a-axis oriented Bi3:25La0:75Ti3O12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 „C/cm2—a new record for bismuth-layered perovskite thin films on substrates—pointing to the superiority of a-axis oriented Bi3:25La0:75Ti3O12 thin films with respect to memory applications