Add to ORKGThin films of Cu0.5Ag0.5InSe2 were prepared on glass substrates held at temperatures in the range 473 – 748 K, by flash evaporation technique. The effect of substrate temperature on the chemical composition, structure, surface morphology and optical properties of Cu0.5Ag0.5InSe2 films was systematically investigated. The Cu0.5Ag0.5InSe2 films deposited at a substrate temperature of 693 K were single phase, polycrystalline with mean grain size around 500 nm and the fundamental optical band gap of 1.14 eV
CuIn0.5Ga0.5Te2 (CIGT) thin films have been prepared by e-beam evaporation from a single crystal pow...
In this article, copper indium di-selenide at different ratios of Cu:In thin films have been grown o...
Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reacti...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline ...
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, A...
CuInS2 semiconductor films were prepared at three substrate temperatures on glass substrates by spra...
Abstract: In this paper, we prepared Cu(In,Ga)Se2 thin films by using co-evaporation method, and ana...
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film de...
The relatively small band gap values (~1 eV) of CuInSe2 thin films limit the conversion efficiencies...
We investigate the influence of substrate and its temperature on the optical constants of CuIn1 amp;...
Thin films of CuInTe2 were grown by flash evaporation. The influence of the substrate temperature T...
This paper focuses on the preparation of CuInxGa1-xSe2 (CIGS) by a dual thermal evaporation method o...
A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation te...
Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mai...
CuIn0.5Ga0.5Te2 (CIGT) thin films have been prepared by e-beam evaporation from a single crystal pow...
In this article, copper indium di-selenide at different ratios of Cu:In thin films have been grown o...
Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reacti...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline ...
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, A...
CuInS2 semiconductor films were prepared at three substrate temperatures on glass substrates by spra...
Abstract: In this paper, we prepared Cu(In,Ga)Se2 thin films by using co-evaporation method, and ana...
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film de...
The relatively small band gap values (~1 eV) of CuInSe2 thin films limit the conversion efficiencies...
We investigate the influence of substrate and its temperature on the optical constants of CuIn1 amp;...
Thin films of CuInTe2 were grown by flash evaporation. The influence of the substrate temperature T...
This paper focuses on the preparation of CuInxGa1-xSe2 (CIGS) by a dual thermal evaporation method o...
A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation te...
Deposition of thin films for material solar cell CuInSe2 are relatively simple. In this research mai...
CuIn0.5Ga0.5Te2 (CIGT) thin films have been prepared by e-beam evaporation from a single crystal pow...
In this article, copper indium di-selenide at different ratios of Cu:In thin films have been grown o...
Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reacti...