Niobium Oxide capacitor, has already found its place in the market as a cost effective and reliable non-burning component. The study of conductivity mechanisms has been done to prove its excellent stability, reliability and non-burning performance. Set of electrical measurements as VA characteristics in forward and reverse mode, frequency characteristics of capacitance, temperature or time dependence of basic parameters together with measurements of basic physical parameters enabled to propose the theoretical model of NbO- Nb2O5- MnO2 system. NbO Capacitor shows identical conductivity mechanism as tantalum capacitor, but furthermore a unique mechanism appears after dielectric breakdown. It causes a high resistance failure mode of NbO capaci...
International audienceThe d.c. conduction is investigated in the two different types of internal bar...
The effects of Nb2O5 addition on the dielectric properties and phase formation of 0.8BaTiO3-0.2Bi(Zn...
Chemistry Department, Maharshi Dayanand University, Rohtak-124 001 Manuscript received 2 July 1996,...
Niobium Oxide capacitor, has already found its place in the market as a cost effective and reliable ...
In order to evaluate the applicability of niobium powder, which was manufactured by the external con...
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-M...
The replacement of the anode material in tantalum capacitors by a new generation of high CV niobium ...
A new family of capacitors based on Niobium Oxide has established itself in many applications. The i...
Increasing demand for tantalum capacitors at the end of last millennium accelerated simultaneously t...
Orthorhombic niobium pentoxide (T-Nb2O5) possesses an intercalation pseudocapacitive behavior, which...
Dependence of leakage current on applied voltage was studied for samples of Nb2O5 thin films in the ...
Our investigation of breakdown is mainly oriented to find a basic parameters describing the phenomen...
770-773The DC conduction data on Nb - Nb2O5 - Al, Ag, Sn and Bi systems have been obtained. The effe...
We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase pre...
Niobium pentoxide, Nb2O5, is a lithium-ion battery anode material that exhibits pseudocapacitance,pa...
International audienceThe d.c. conduction is investigated in the two different types of internal bar...
The effects of Nb2O5 addition on the dielectric properties and phase formation of 0.8BaTiO3-0.2Bi(Zn...
Chemistry Department, Maharshi Dayanand University, Rohtak-124 001 Manuscript received 2 July 1996,...
Niobium Oxide capacitor, has already found its place in the market as a cost effective and reliable ...
In order to evaluate the applicability of niobium powder, which was manufactured by the external con...
The aim of my work was the study of niob-oxide capacitor properties. Capacitor structure NbO-Nb2O5-M...
The replacement of the anode material in tantalum capacitors by a new generation of high CV niobium ...
A new family of capacitors based on Niobium Oxide has established itself in many applications. The i...
Increasing demand for tantalum capacitors at the end of last millennium accelerated simultaneously t...
Orthorhombic niobium pentoxide (T-Nb2O5) possesses an intercalation pseudocapacitive behavior, which...
Dependence of leakage current on applied voltage was studied for samples of Nb2O5 thin films in the ...
Our investigation of breakdown is mainly oriented to find a basic parameters describing the phenomen...
770-773The DC conduction data on Nb - Nb2O5 - Al, Ag, Sn and Bi systems have been obtained. The effe...
We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase pre...
Niobium pentoxide, Nb2O5, is a lithium-ion battery anode material that exhibits pseudocapacitance,pa...
International audienceThe d.c. conduction is investigated in the two different types of internal bar...
The effects of Nb2O5 addition on the dielectric properties and phase formation of 0.8BaTiO3-0.2Bi(Zn...
Chemistry Department, Maharshi Dayanand University, Rohtak-124 001 Manuscript received 2 July 1996,...