Control of variability in the back end of the line, and hence in interconnect performance as well, has become extremely difficult with the introduction of new materials such as copper and low-k di-electrics. Uniformity of chemical-mechanical planarization (CMP) requires the addition of area fill geometries into the layout, in order to smoothen the variation of feature densities across the die. Our work addresses the following smoothness gap in the recent litera-ture on area fill synthesis. (1) The very first paper on the filling problem (Kahng et al., ISPD98 [7]) noted that there is potentially a large difference between the optimum window densities in fixed dissections vs. when all possible windows in the layout are consid-ered. (2) Despit...
Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechani...
Chemical Mechanical Polishing (CMP) has become the preferred planarization method for multilevel int...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
We propose practical iterated methods for layout density control for CMP uniformity, based on linear...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
textChemical-mechanical polishing (CMP) is an enabling technique used in deep- submicron VLSI manuf...
Non-planar surface may cause incorrect transfer of patterns during lithography. In today’s IC manufa...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
In this thesis, three major issues related to process variation in integrated circuits in the subwav...
Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechani...
Chemical Mechanical Polishing (CMP) has become the preferred planarization method for multilevel int...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
We propose practical iterated methods for layout density control for CMP uniformity, based on linear...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
textChemical-mechanical polishing (CMP) is an enabling technique used in deep- submicron VLSI manuf...
Non-planar surface may cause incorrect transfer of patterns during lithography. In today’s IC manufa...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
In this thesis, three major issues related to process variation in integrated circuits in the subwav...
Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechani...
Chemical Mechanical Polishing (CMP) has become the preferred planarization method for multilevel int...
Due to copyright restrictions, the access to the full text of this article is only available via sub...