In the present paper the Hall measurement in the liquid state of metals, using two-frequency method, ac-dc method and simultaneous method will be described. The Hall effect has been measured in Hg and Ga, both solid and liquid state. We have also measured magnetoresistance and Hall effect in InSb single crystal in which magnetoresistance appears even in low magnetic field and Si in which magnetoresistance do not appear clearly. In order to investigate the magnetic field dependence of galvanomagnetic effects in metals (in solid and liquid state) and semiconductors, the measurement in high magnetic field up to ±9 [T] were also performed
Measurements have been made on the angular dependence of the magnetoresistance effect and the Hall e...
The design, fabrication and performance of an Extraordinary Magnetoresistance (EMR) and a Vertical M...
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
The Hall coefficient and electrical resistivity were measured for an oriented cadmium sulfide crysta...
The principle of the Hall effect and its application to the characterization of semiconductors are d...
Measurements have been made of the angular dependence of magnetoresistance and Hall effect of indium...
Prior research has shown that the application of solvents can change the magnetic properties of thin...
In order to carry out my physics comprehensive project, I propose to study the properties of Ag and ...
The primary purpose of this investigation was to determine whether there exists a correlation betwee...
This thesis presents observations on size-effect oscillations in the Hall effect in an oriented sing...
An apparatus for the measurement of the Hall effect in materials of low mobility and high resistivit...
Paškevič Česlav postgraduate student of Physics and astrophysics (Information Technology branch). Th...
New magnetoresistance measurements on naturally occurring inversion layers adjacent to grain boundar...
We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In t...
Measurements have been made on the angular dependence of the magnetoresistance effect and the Hall e...
The design, fabrication and performance of an Extraordinary Magnetoresistance (EMR) and a Vertical M...
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
The Hall coefficient and electrical resistivity were measured for an oriented cadmium sulfide crysta...
The principle of the Hall effect and its application to the characterization of semiconductors are d...
Measurements have been made of the angular dependence of magnetoresistance and Hall effect of indium...
Prior research has shown that the application of solvents can change the magnetic properties of thin...
In order to carry out my physics comprehensive project, I propose to study the properties of Ag and ...
The primary purpose of this investigation was to determine whether there exists a correlation betwee...
This thesis presents observations on size-effect oscillations in the Hall effect in an oriented sing...
An apparatus for the measurement of the Hall effect in materials of low mobility and high resistivit...
Paškevič Česlav postgraduate student of Physics and astrophysics (Information Technology branch). Th...
New magnetoresistance measurements on naturally occurring inversion layers adjacent to grain boundar...
We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In t...
Measurements have been made on the angular dependence of the magnetoresistance effect and the Hall e...
The design, fabrication and performance of an Extraordinary Magnetoresistance (EMR) and a Vertical M...
The use of magnetic fields in the electrical characterization of semiconductor materials is familiar...