JOURNAL DE PHYSIQUE IV Colloque C6, supplement au Journal de Physique In, Vol. 1, dkembre 1991 ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS

Abstract- The inf luence of trapping centres on the phase s h i f t of the short c i r c u i t current generated by po in t source i s analyzed. It i s shown tha t maximum value of the phase corresponds t o emission coef-+ f i c i en t. Minor i ty trapping centres of the Cu implanted n p shallow junct ion are measured by ac-LBIC and ac-EBIC. 1.- Introduction. Electron beam induced current IEBIC) technique was f i r s t used t h i r t