In this paper, we introduce our new high voltage IGBT HiPak module line-up with voltage ratings ranging from 2.5kV up to 6.5kV. We demonstrate for the first time the performance of our HV-HiPak modules employing ABB’s newly developed high voltage SPT- IGBTs and diodes. The new devices show excellent over all electrical performance and are capable of withstanding extreme conditions during device turn-off and short circuit operation. Therefore, setting new standards in SOA capability for the given voltage class. 1
In this paper the HV LinPak (high voltage LinPak) is presented, a power module with a voltage rating...
IGBTs are today’s most important power-semiconductor switches in the field of medium and high power ...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
Abstract A new IGBT press pack package was developed to meet increasingly challenging requirements f...
For the evolution of power electronics, it is essential to enhance the performance of Insulate Gate ...
Fast recovery diodes, though an integral part of inverter design, traditionally take a “back seat ” ...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The development of solid-state switches for pulsed power applications has been of considerable inter...
Abstract In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV di...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
In modern power electronic systems, the Insulated Gate Bipolar Transistor (IGBT) power modules are t...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
In this paper the HV LinPak (high voltage LinPak) is presented, a power module with a voltage rating...
IGBTs are today’s most important power-semiconductor switches in the field of medium and high power ...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
Abstract A new IGBT press pack package was developed to meet increasingly challenging requirements f...
For the evolution of power electronics, it is essential to enhance the performance of Insulate Gate ...
Fast recovery diodes, though an integral part of inverter design, traditionally take a “back seat ” ...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The development of solid-state switches for pulsed power applications has been of considerable inter...
Abstract In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV di...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
In modern power electronic systems, the Insulated Gate Bipolar Transistor (IGBT) power modules are t...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
In this paper the HV LinPak (high voltage LinPak) is presented, a power module with a voltage rating...
IGBTs are today’s most important power-semiconductor switches in the field of medium and high power ...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...