Silicon Nitride MIM Capacitor Reliability for Multiple Dielectric Thicknesses

Abstract-A single GaAs MMIC fabrication flow produces three different types of silicon nitride capacitors, with 50 nm, 200 nm, and 250 nm nominal dielectric thickness. Ramped voltage data indicates that all three types are reliable. The results are compared to predictions of the linear field and Frenkel-Poole conduction models for capacitor lifetime at fixed voltages