Add to ORKGAbstract: We report sub-nanometer linewidth control in high index contrast photonic devices using CMOS fabrication tools. A linewidth uniformity of 20pm and 0.1nm is achieved over a distance scale of 25μm and 10,000μm respectively. Over a 200mm wafer, we have achieved linewidth uniformity of 99.55 % for a 450nm photonic wire
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communica...
Photonic integrated circuits (PICs) on silicon (Si) hold the promise of densely integrated optical c...
Abstract: We report sub-nanometer linewidth control in high index contrast photonic devices using CM...
Abstract—We report subnanometer linewidth uniformity in sil-icon nanophotonics devices fabricated us...
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-v...
Abstract—High-index contrast silicon-on-insulator technology enables wavelength-scale compact photon...
High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circui...
Large-scale photonics integration has been proposed for many years to support the ever increasing re...
We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on ...
We give an overview of recent progress in passive spectral filters and demultiplexers based on silic...
Silicon on Insulator is an ideal platform for largescale nanophotonic integration. We show that tigh...
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This ...
Abstract—The current trend in silicon photonics towards higher levels of integration as well as the ...
We report two-fold improvement in Si photonic device uniformity over a 200mm SOI wafer through locat...
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communica...
Photonic integrated circuits (PICs) on silicon (Si) hold the promise of densely integrated optical c...
Abstract: We report sub-nanometer linewidth control in high index contrast photonic devices using CM...
Abstract—We report subnanometer linewidth uniformity in sil-icon nanophotonics devices fabricated us...
We report subnanometer linewidth uniformity in silicon nanophotonics devices fabricated using high-v...
Abstract—High-index contrast silicon-on-insulator technology enables wavelength-scale compact photon...
High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circui...
Large-scale photonics integration has been proposed for many years to support the ever increasing re...
We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on ...
We give an overview of recent progress in passive spectral filters and demultiplexers based on silic...
Silicon on Insulator is an ideal platform for largescale nanophotonic integration. We show that tigh...
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This ...
Abstract—The current trend in silicon photonics towards higher levels of integration as well as the ...
We report two-fold improvement in Si photonic device uniformity over a 200mm SOI wafer through locat...
Abstract—We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as ...
Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communica...
Photonic integrated circuits (PICs) on silicon (Si) hold the promise of densely integrated optical c...