Add to ORKG[Note: This is a draft of a document submitted for publication. Contents of thi
poster, abstract only; not published in Proceedings of the XXXII International School on the Physics...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material ...
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possib...
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
The hydride vapor phase epitaxy technique has been used to grow bulk GaN crystals for processing int...
substrates (grown at 720 1C) was used as the seed layer for growing GaN films of 0.3- to 2-mm thick....
for some very practical optoelectronic devices. Because of its direct bandgap alloying with GaN, ART...
Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic ...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
© 2015 Materials Research Society. Greener technologies for more efficient power generation, distrib...
Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but the...
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-o...
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs...
poster, abstract only; not published in Proceedings of the XXXII International School on the Physics...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material ...
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possib...
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-...
AbstractThe developing list of wide gap substrates for device production is remarkable compared with...
The hydride vapor phase epitaxy technique has been used to grow bulk GaN crystals for processing int...
substrates (grown at 720 1C) was used as the seed layer for growing GaN films of 0.3- to 2-mm thick....
for some very practical optoelectronic devices. Because of its direct bandgap alloying with GaN, ART...
Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic ...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
© 2015 Materials Research Society. Greener technologies for more efficient power generation, distrib...
Optoelectrical and microelectronic devices involving gallium nitride have become a challenge but the...
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-o...
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs...
poster, abstract only; not published in Proceedings of the XXXII International School on the Physics...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material ...