Add to ORKGRise of junction temperature during operation can greatly affect performance and reliability of Light-emitting diodes (LED). Unfortunately, the junction temperature of the LED can not be measured directly. In this report, non-contact methods using Electro-luminescence (EL) and Micro-Raman spectroscopy were employed to estimate the junction temperature of GaN-based LED
Due to copyright restrictions, the access to the full text of this article is only available via sub...
In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease ...
There are vast numbers of light-emitting diode (LED) luminaires to choose from, but not all LED lumi...
Rise of junction temperature during operation can greatly affect performance and reliability of Ligh...
A novel method by using a pulsed-laser Raman scattering technique was employed to estimate junction ...
The goal of this study was to develop a non-contact method for determining the junction temperature ...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
<div class="aip-paragraph">An expression of the relation between junction temperature and forward vo...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most efficie...
We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN li...
Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly dependent ...
Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electron...
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting d...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease ...
There are vast numbers of light-emitting diode (LED) luminaires to choose from, but not all LED lumi...
Rise of junction temperature during operation can greatly affect performance and reliability of Ligh...
A novel method by using a pulsed-laser Raman scattering technique was employed to estimate junction ...
The goal of this study was to develop a non-contact method for determining the junction temperature ...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
<div class="aip-paragraph">An expression of the relation between junction temperature and forward vo...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most efficie...
We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN li...
Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly dependent ...
Gallium nitride (GaN) based electronics have shown great potential for RF devices and power electron...
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting d...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease ...
There are vast numbers of light-emitting diode (LED) luminaires to choose from, but not all LED lumi...