The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by using prototype or experimental devices in many different power applications ranging from medium voltage to high voltage or for high temperature or high switching frequency applications. The main advantages of using SiC-based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort at Oak Ridge National Laboratory (ORNL) and The University of Tennessee (UT) is presented in this paper
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much a...
Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to ...
ADEPT Project: Cree is developing silicon carbide (SiC) power transistors that are 50% more energy e...
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior fea...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Abstract: The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their su...
This article presents the analysis of two topologies of power converters. Voltage Source Inverter (V...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
Abstract. As commercial-grade silicon carbide (SiC) power electronics devices become available, the ...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
Recent technological advances have allowed silicon (Si) semiconductor technology to approach the the...
The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted inc...
The benefits of SiC devices are demonstrated in different application. Therefore different power and...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much a...
Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to ...
ADEPT Project: Cree is developing silicon carbide (SiC) power transistors that are 50% more energy e...
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior fea...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Abstract: The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their su...
This article presents the analysis of two topologies of power converters. Voltage Source Inverter (V...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
Abstract. As commercial-grade silicon carbide (SiC) power electronics devices become available, the ...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
Recent technological advances have allowed silicon (Si) semiconductor technology to approach the the...
The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted inc...
The benefits of SiC devices are demonstrated in different application. Therefore different power and...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much a...
Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to ...
ADEPT Project: Cree is developing silicon carbide (SiC) power transistors that are 50% more energy e...