Abstract — It is possible to enhance speed and yield of reconfigurable devices utilizing WID variations. An LUT array LSI is fabricated on a 90nm process to mea-sure WID and D2D variations. Performance fluctua-tions are measured by counting the number of LUTs through which a signal is passing within a certain time. D2D and WID variations are clearly observed by the measurement. I
Electronic monitoring utilizing process-specific Ring Oscillators (RO) is explored as a means of ide...
The need for efficient and accurate detection schemes to assess the impact of process variations on ...
Variations in delay caused by within-die and die-to-die process variations and SOI history effect in...
Abstract — It is possible to enhance speed and yield of reconfigurable devices utilizing WID variati...
A reconfiguralbe device can be utilized to enhance speed and yield on the sub-100nm device technolog...
Abstract — We have fabricated an LUT-based FPGA device with functionalities measuring within-die var...
Abstract — From the measurement results of a 90 nm process, we propose a model of WID variations of ...
SUMMARY We propose guidelines for LSI-chip design, taking the within-die variations into considerati...
dissertationWith the scaling of MOSFET dimensions and the performance enhancement features in the MO...
Abstract — In order to investigate the systematic intra-die variations, the intra-die threshold volt...
For state-of-the-art semiconductor technologies, it is challenging to predict the performance and ch...
This paper reports design, efficiency, and measurement results of the process variation and temperat...
Both random and systematic within-die process variations (PV) are growing more severe with shrinking...
We report the design and characterization of a circuit technique to measure the on-chip delay of a...
Abstract—Increased variation in CMOS processes due to scaling results in greater reliance on accurat...
Electronic monitoring utilizing process-specific Ring Oscillators (RO) is explored as a means of ide...
The need for efficient and accurate detection schemes to assess the impact of process variations on ...
Variations in delay caused by within-die and die-to-die process variations and SOI history effect in...
Abstract — It is possible to enhance speed and yield of reconfigurable devices utilizing WID variati...
A reconfiguralbe device can be utilized to enhance speed and yield on the sub-100nm device technolog...
Abstract — We have fabricated an LUT-based FPGA device with functionalities measuring within-die var...
Abstract — From the measurement results of a 90 nm process, we propose a model of WID variations of ...
SUMMARY We propose guidelines for LSI-chip design, taking the within-die variations into considerati...
dissertationWith the scaling of MOSFET dimensions and the performance enhancement features in the MO...
Abstract — In order to investigate the systematic intra-die variations, the intra-die threshold volt...
For state-of-the-art semiconductor technologies, it is challenging to predict the performance and ch...
This paper reports design, efficiency, and measurement results of the process variation and temperat...
Both random and systematic within-die process variations (PV) are growing more severe with shrinking...
We report the design and characterization of a circuit technique to measure the on-chip delay of a...
Abstract—Increased variation in CMOS processes due to scaling results in greater reliance on accurat...
Electronic monitoring utilizing process-specific Ring Oscillators (RO) is explored as a means of ide...
The need for efficient and accurate detection schemes to assess the impact of process variations on ...
Variations in delay caused by within-die and die-to-die process variations and SOI history effect in...