Add to ORKGPolycrystalline silicon (poly-Si) nanowires have been used as a building block for Coulomb-blockade (CB) devices. In these structures, individual silicon grains and grain boundaries (GBs) act as an electron charging islan
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
Abstract—A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
Carrier transport was investigated in two different types of ultra-thin silicon films, polycrystalli...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporati...
grain boundary Abstract. We discuss a method to fabricate single-electron transistors targeted at hi...
Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporati...
My thesis is devoted to the study of transport properties of Silicon Nanowires obtained by a bottom-...
MasterWe simulated polysilicon nanowire tunneling field-effect transistors (poly-Si NW TFETs) for ul...
A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthe...
Abstract—A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
Abstract—A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
Carrier transport was investigated in two different types of ultra-thin silicon films, polycrystalli...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-S...
Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporati...
grain boundary Abstract. We discuss a method to fabricate single-electron transistors targeted at hi...
Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporati...
My thesis is devoted to the study of transport properties of Silicon Nanowires obtained by a bottom-...
MasterWe simulated polysilicon nanowire tunneling field-effect transistors (poly-Si NW TFETs) for ul...
A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthe...
Abstract—A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...
Abstract—A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-...
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystallin...