MOLECULAR BEAM EPITAXY: PRINCIPLES AND APPLICATIONS

Molecular Beam Epitaxy (MBE) is an Ultra-High-Vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. Since its introduction in the 1970s as a tool for growing high-purity semiconductor films, MBE has evolved into one of the most widely used techniques for producing epitaxial layers of metals