O 3

Abstract—We present a physical modeling of tunneling currents through ultrathin high- gate stacks, which includes an ultrathin interface layer, both electron and hole quantization in the substrate and gate electrode, and energy band offsets between high- di-electrics and Si determined from high-resolution XPS. Excellent agreements between simulated and experimentally measured tun-neling currents have been obtained for chemical vapor deposited and physical vapor deposited HfO 2 with and without N