Laser-caused modification of structure and mechanical properties of silicon

There were investigated laser annealing conditions which cause relaxation of microtensions near in proximity to dislocation sources. It was determined that density and efficiency of such sources may be varied through oxidation of Si crystalles. Utiiigation of the found conditions of thermal and laser annealing enabled the autors to set microhardness of porous Si and flexure of Si-Si02-Si (polycrystallic) structures