Preparation of AgInS 2 Thin Films by Sulfurization of Ag/In Precursors for Solar Cell Application

This paper describes preparation of AgInS2 thin films as an absorption layer material for a top cell of tandem solar cells. The film has been prepared by sulfurization of evaporated Ag/In metal precursors. Ag/In ratios in the films were controlled by changing Ag/In ratios in the vacuum chamber. The annealing temperature of 300 was found to be appropriate for sulfurization in our case