R. Physique 6 (2005).

Received *****; accepted after revision +++++ Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges. Special emphasis is placed on bit write strategies and their respective scaling perspectives. To cite this article: R.C. Sousa, I.L. Prejbeanu, C