Add to ORKGNarrow gap IV-VI semiconductors (lead salts) are well known as favorable materials for infrared (IR) lasers operating in the 3–30 µm spectral region owing to their direct-band electronic structure and low Auger recombination rate [1]. Large wavelength tunability has made the lead salt lasers uniquely suited for atmospheric pollution monitoring systems based on high-resolution absorptio
AbstractMid-infrared vertical external cavity surface emitting lasers (VECSEL) were developed for th...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...
Binary lead chalcogenides PbS, PbSe, and PbTe, frequently called ‘lead salts,' are the major IV–VI M...
The research detailed by this dissertation has demonstrated the design, fabrication, and characteriz...
Lead-salt diode lasers have been commercially available for more than two decades and became essenti...
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and-...
Double Heterostrucutre lasers are made by Molecular Beam Epitaxy of PbEuSe and PbSnSe. The highest o...
bS is important for a wide range of applications including mid- and near-infrared emission and detec...
Double-heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between c...
While IV-VI materials were some of the first semiconductors ever studied, they have yet to reach wid...
While IV-VI materials were some of the first semiconductors ever studied, they have yet to reach wid...
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors an...
Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on B...
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modula...
AbstractMid-infrared vertical external cavity surface emitting lasers (VECSEL) were developed for th...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...
Binary lead chalcogenides PbS, PbSe, and PbTe, frequently called ‘lead salts,' are the major IV–VI M...
The research detailed by this dissertation has demonstrated the design, fabrication, and characteriz...
Lead-salt diode lasers have been commercially available for more than two decades and became essenti...
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and-...
Double Heterostrucutre lasers are made by Molecular Beam Epitaxy of PbEuSe and PbSnSe. The highest o...
bS is important for a wide range of applications including mid- and near-infrared emission and detec...
Double-heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between c...
While IV-VI materials were some of the first semiconductors ever studied, they have yet to reach wid...
While IV-VI materials were some of the first semiconductors ever studied, they have yet to reach wid...
Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors an...
Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on B...
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modula...
AbstractMid-infrared vertical external cavity surface emitting lasers (VECSEL) were developed for th...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substra...