Add to ORKGWe investigated a simple "eld e!ect passivation of the silicon surfaces using the high-pressure H 2 O vapor heating. Heat treatment with 2.1]106 Pa
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
A silicon wafer with a silicon nitride layer deposited by low pressure chemical vapour deposition ma...
The influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by ...
Aqueous silicon dispersions are used to produce pyrotechnic time delay compositions. The propensity ...
Plasma ammonia treatment at 400°C leads to de-passivation of a fully hydrogenated Si-SiO2 interface,...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
A silicon wafer with a silicon nitride layer deposited by low pressure chemical vapour deposition ma...
The influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) film...
We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by ...
Aqueous silicon dispersions are used to produce pyrotechnic time delay compositions. The propensity ...
Plasma ammonia treatment at 400°C leads to de-passivation of a fully hydrogenated Si-SiO2 interface,...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach e...
We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior t...