Ge Out-Diffusion: Performance Booster?

Abstract: Process-induced strained-silicon (PSS) pMOSFETs using embeded Si1−xGex source/drain have emerged as an attractive avenue for extending Si CMOS performance as dictated by Moore’s law. In this paper, we show using technology CAD (TCAD) process/device simulation that out-diffused (during annealing in temperature range of 800-1100 oC) Ge atoms in the strained-Si channel enhances the p-MOSFET performance. 1