Several kinds of models are proposed to analyze the electron flow through semicon-ductor devices. Especially a hydrodynamic, an energy transport and a drift-diffusion models are frequently utilized for the simulation with the suitable choice according to the purpose of use of real devices. Hence, mathematical analysis on solvability of these models globally in time and their model hierarchy are important problems not only in mathematics but also in engineering. The hierarchy is formally understood by the limit procedure to make a momentum relaxation time and/or an energy relaxation time tend to zero. The main purpose of this talk is to discuss the solvability of the models and justify the relaxation limit procedures rigorously
The relaxation-time limit from the quantum hydrodynamic model to the quantum drift-diffusion equatio...
We propose a pseudo-hydrodynamic (PHD) model that has hyperbolic principal part. It formally converg...
A model hierarchy of macroscopic models for quantum semiconductors is presented. Furthermore, a revi...
A model hierarchy for semiconductor devices is presented, in particular kinetic models (Boltzmann an...
AbstractThis work deals with non-isentropic hydrodynamic models for semiconductors with short moment...
A hierarchy of fluid dynamical models for semiconductors and plasmas is presented. Starting from an ...
AbstractWe study a relaxation limit of a solution to the initial–boundary value problem for a hydrod...
Consiglio Nazionale delle Ricerche (CNR). Biblioteca Centrale / CNR - Consiglio Nazionale delle Rich...
Abstract. Enhanced functional integration in modern electron devices requires an accurate modeling o...
AbstractIn this paper, the global existence and the large time behavior of smooth solutions to the i...
A simplified transient energy-transport system for semiconductors subject to mixed Dirichlet-Neumann...
This paper first reviews some basic facts about electron transport in semiconductor materials. Then,...
The hydrodynamic model for semiconductors includes equations of continuity for the carrier number, a...
AbstractIn the paper, we discuss the relaxation limit of a bipolar isentropic hydrodynamical models ...
this paper, we are concerned with two modern semiconductor models: the energy-transport and the quan...
The relaxation-time limit from the quantum hydrodynamic model to the quantum drift-diffusion equatio...
We propose a pseudo-hydrodynamic (PHD) model that has hyperbolic principal part. It formally converg...
A model hierarchy of macroscopic models for quantum semiconductors is presented. Furthermore, a revi...
A model hierarchy for semiconductor devices is presented, in particular kinetic models (Boltzmann an...
AbstractThis work deals with non-isentropic hydrodynamic models for semiconductors with short moment...
A hierarchy of fluid dynamical models for semiconductors and plasmas is presented. Starting from an ...
AbstractWe study a relaxation limit of a solution to the initial–boundary value problem for a hydrod...
Consiglio Nazionale delle Ricerche (CNR). Biblioteca Centrale / CNR - Consiglio Nazionale delle Rich...
Abstract. Enhanced functional integration in modern electron devices requires an accurate modeling o...
AbstractIn this paper, the global existence and the large time behavior of smooth solutions to the i...
A simplified transient energy-transport system for semiconductors subject to mixed Dirichlet-Neumann...
This paper first reviews some basic facts about electron transport in semiconductor materials. Then,...
The hydrodynamic model for semiconductors includes equations of continuity for the carrier number, a...
AbstractIn the paper, we discuss the relaxation limit of a bipolar isentropic hydrodynamical models ...
this paper, we are concerned with two modern semiconductor models: the energy-transport and the quan...
The relaxation-time limit from the quantum hydrodynamic model to the quantum drift-diffusion equatio...
We propose a pseudo-hydrodynamic (PHD) model that has hyperbolic principal part. It formally converg...
A model hierarchy of macroscopic models for quantum semiconductors is presented. Furthermore, a revi...