Pressure distribution at a wafer-pad contact surface in chemical-mechanical polishing has been modeled using finite element analysis. The model reveals the pressure abrupt increment at the wafer peripheral portion resulting from geometrical discontinuity at the contact edge. The amplitude of the pressure abruptness varies significantly with properties of polishing pad. Furthermore, the effect of pressurized retainer ring on the pressure distribution has been analyzed, illustrating the fundamental functions of the retainer ring in improvement of the wafer-pad contact pressure distribution. 1
A material removal rate (MRR) model as a function of abrasive weight concentration has been propose...
Chemical-Mechanical Planarization (CMP) is a crucial intermediate process in integrated circuit (IC)...
High precision optical components are required for modern life and future. To achieve component’s su...
Topography on wafer surface affects chemical-mechanical polishing (CMP) greatly. In this paper, 2-D ...
stress correlates with polishing nonuniformity while the normal stress does not and the CMP uniformi...
The simulation of chemical-mechanical polishing (CMP) is particularly important within integrated to...
The Chemical Mechanical polishing (CMP) process is now widely employed in the Integrated Circuit Fab...
A mathematical model for chemical-mechanical polishing is developed. The effects of pad bending, flu...
The reproduction of very high quality surfaces during the optical glass polishing is the mannered ma...
The reproduction of very high quality surfaces during the optical glass polishing is the mannered ma...
There are many elements affecting CMP performance such as slurry, pad, process parameters and pad co...
In this paper, a 2D axisymmetric quasic-static finite element model for chemical-mechanical polishin...
Pressure distribution in polishing process is used to control the outcome surface form of silicon wa...
[[abstract]]There are two important things when doing the CMP, one is the high removal rate, and the...
In this paper, a physical model for the development of dishing during metal chemical mechanical poli...
A material removal rate (MRR) model as a function of abrasive weight concentration has been propose...
Chemical-Mechanical Planarization (CMP) is a crucial intermediate process in integrated circuit (IC)...
High precision optical components are required for modern life and future. To achieve component’s su...
Topography on wafer surface affects chemical-mechanical polishing (CMP) greatly. In this paper, 2-D ...
stress correlates with polishing nonuniformity while the normal stress does not and the CMP uniformi...
The simulation of chemical-mechanical polishing (CMP) is particularly important within integrated to...
The Chemical Mechanical polishing (CMP) process is now widely employed in the Integrated Circuit Fab...
A mathematical model for chemical-mechanical polishing is developed. The effects of pad bending, flu...
The reproduction of very high quality surfaces during the optical glass polishing is the mannered ma...
The reproduction of very high quality surfaces during the optical glass polishing is the mannered ma...
There are many elements affecting CMP performance such as slurry, pad, process parameters and pad co...
In this paper, a 2D axisymmetric quasic-static finite element model for chemical-mechanical polishin...
Pressure distribution in polishing process is used to control the outcome surface form of silicon wa...
[[abstract]]There are two important things when doing the CMP, one is the high removal rate, and the...
In this paper, a physical model for the development of dishing during metal chemical mechanical poli...
A material removal rate (MRR) model as a function of abrasive weight concentration has been propose...
Chemical-Mechanical Planarization (CMP) is a crucial intermediate process in integrated circuit (IC)...
High precision optical components are required for modern life and future. To achieve component’s su...