— 163 — Ge Shallow Junction Formation with Preamorphizing Technique

Recently Ge is extensively investigated as an alternative material to Si because of its higher mobility and injection velocity [1]. A lot of work is done concerning gate stack to develop practical Ge MOS devices and 100-nm-scale MOS devices [2,3] were already reported. However, activities of investigation on doping and shallow junction formation are limited compared with them. Although th