Add to ORKGA test chip has been designed using standard and radiation tolerant techniques in a 0.25µm Silicon-On-Sapphire process. The test chip has been irradiated under a 230 MeV proton beam. The SEE results are reported
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, h...
This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Pr...
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEU...
We report on several irradiation studies performed on BTeV preFPIX2 pixel readout chip prototypes ex...
High energy and nuclear physics experiments need tracking devices with increasing spatial precision ...
MOSFETs fabricated in a commercial 0.25µm Silicon-on-Sapphire CMOS technology are irradiated with a ...
Characterization of simple devices as well as complex circuits, in two commercial 0.25{micro} proces...
We present new experimental results on the sensitivity of commercial SRAMs to very low-LET ionizing ...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
International audienceThis paper presents the experimental results of $17~MeV$ proton irradiation on...
Radiation hardness was investigated for a silicon strip detector (SSD) to be used as a focal plane d...
A radiation tolerant pixel detector readout chip has been developed in a commercial 0.25 mu m CMOS p...
A new pixel readout prototype has been developed at CERN for high- energy physics applications. This...
This paper presents an intended test setup and methodology for testing micro-controller SoCs against...
With the development of silicon technologies, the minimum feature size of transistors has scaled dow...
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, h...
This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Pr...
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEU...
We report on several irradiation studies performed on BTeV preFPIX2 pixel readout chip prototypes ex...
High energy and nuclear physics experiments need tracking devices with increasing spatial precision ...
MOSFETs fabricated in a commercial 0.25µm Silicon-on-Sapphire CMOS technology are irradiated with a ...
Characterization of simple devices as well as complex circuits, in two commercial 0.25{micro} proces...
We present new experimental results on the sensitivity of commercial SRAMs to very low-LET ionizing ...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
International audienceThis paper presents the experimental results of $17~MeV$ proton irradiation on...
Radiation hardness was investigated for a silicon strip detector (SSD) to be used as a focal plane d...
A radiation tolerant pixel detector readout chip has been developed in a commercial 0.25 mu m CMOS p...
A new pixel readout prototype has been developed at CERN for high- energy physics applications. This...
This paper presents an intended test setup and methodology for testing micro-controller SoCs against...
With the development of silicon technologies, the minimum feature size of transistors has scaled dow...
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, h...
This paper discusses radiation tests on complex System-on-Chip (SoC) controllers using Low-Energy Pr...
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEU...