Reemergence of the Surface-Potential-Based Compact MOSFET Models (invited)

Abstract. This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (φs) approximation. Introduction. The familiar requirements for compact MOSFET modeling derive from reductions of the device dimensions and power supply voltage. Consequently, there is a need for the accurate description of the moderate inversion region (which expands as a fraction of the overal