Add to ORKGWe report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET). The differential con-ductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD. The discrete energy levels ex-tracted from the differential conductance characteristics agree well with those estimated from a harmonic oscillator approximation. The separation between energy levels is confirmed by using a potential shape extracted from a 3-dimensional device simulation. PACS numbers: 73.20.D, 85.30.Vw, 85.30.W
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum ...
We present the fabrication and low-temperature electron transport measurements of circuits consistin...
We study the details of electronic transport related to the atomistic structure of silicon quantum d...
This thesis describes the development and demonstration of a new technique for the fabrication of we...
We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we exten...
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, ...
We report on electronic transport measurements through a silicon double quantum dot consisting of a ...
A novel technique has been developed for the fabrication of Si quantum dot structures with controlla...
We investigate the gate-induced onset of few-electron regime through the undoped channel of a silico...
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at ...
Novel metal-oxide-semiconductor (MOS)-based single-electron transistors (MOSETs) using band-to-band ...
This Thesis is submitted in partial fulfillment of the requirements for the degree of Bachelor of Ap...
In this work, we experimentally investigate the impact of electrical stress on the tunability of sin...
In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-ef...
Data set for: Hillier, J. W. et al. (2021). Investigating stability and tunability of quantum dot tr...
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum ...
We present the fabrication and low-temperature electron transport measurements of circuits consistin...
We study the details of electronic transport related to the atomistic structure of silicon quantum d...
This thesis describes the development and demonstration of a new technique for the fabrication of we...
We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we exten...
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, ...
We report on electronic transport measurements through a silicon double quantum dot consisting of a ...
A novel technique has been developed for the fabrication of Si quantum dot structures with controlla...
We investigate the gate-induced onset of few-electron regime through the undoped channel of a silico...
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at ...
Novel metal-oxide-semiconductor (MOS)-based single-electron transistors (MOSETs) using band-to-band ...
This Thesis is submitted in partial fulfillment of the requirements for the degree of Bachelor of Ap...
In this work, we experimentally investigate the impact of electrical stress on the tunability of sin...
In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-ef...
Data set for: Hillier, J. W. et al. (2021). Investigating stability and tunability of quantum dot tr...
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum ...
We present the fabrication and low-temperature electron transport measurements of circuits consistin...
We study the details of electronic transport related to the atomistic structure of silicon quantum d...