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Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-Effect-Transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 “virtual substrate”. The n-type transistors were fabricated using a standard MOS process. The channel is a thin, undoped layer of strained Si and is buried below an arsenic-doped Si0.7Ge0.3 layer, which provides the carriers. The devices exhibited excellent current-voltage characteristics in terms of transconductance and drain current, with no breakdown or leakage. A level-1 model was extracted, for use in circuit design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS processes. These devices are of particular importance in analogue applications