Add to ORKGPhosphorus (31P) doped silicon (Si:P) is a technologically important material with possible uses in spintronic and quantum information processing devices [1]. One way to understand the properties of this material is by investigation of spin-dependent electronic transitions which influence transport and recombination and thus, the conductivity. Whilst studies o
In recent years, a variety of solid-state qubits has been realized, including quantum dots, supercon...
In this work we show that the cooling rate following a platinum diffusion strongly influences the e...
The EPR properties of phosphorus-doped, silicon samples were investigated through the temperature r...
This thesis investigates the defects, charge states and spin properties of phosphorus doped silicon,...
Spin susceptibility, g-value, and EPR linewidth data are presented for phosphorus-doped silicon samp...
International audienceWe report on a systematic analysis of phosphorus diffusion in silicon on insul...
This thesis demonstrates the fabrication and the measurement of single-electron tunnelling through d...
We present density functional theory calculations of phosphorus dopants in bulk silicon and of sever...
Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact ...
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at ...
The integration of spintronic elements with silicon technologies in order to produce active spintron...
In last decade the process of spin relaxation of conduction electrons in semiconductor structures ha...
The spins of phosphorus doped in silicon are potential candidates for a quantum computing device, w...
Supersaturated solutions of phosphorus in silicon were obtained by ion implantation and pulsed ruby ...
Recently, electrical injection of spin polarization in n-type and p-type silicon has been experiment...
In recent years, a variety of solid-state qubits has been realized, including quantum dots, supercon...
In this work we show that the cooling rate following a platinum diffusion strongly influences the e...
The EPR properties of phosphorus-doped, silicon samples were investigated through the temperature r...
This thesis investigates the defects, charge states and spin properties of phosphorus doped silicon,...
Spin susceptibility, g-value, and EPR linewidth data are presented for phosphorus-doped silicon samp...
International audienceWe report on a systematic analysis of phosphorus diffusion in silicon on insul...
This thesis demonstrates the fabrication and the measurement of single-electron tunnelling through d...
We present density functional theory calculations of phosphorus dopants in bulk silicon and of sever...
Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact ...
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at ...
The integration of spintronic elements with silicon technologies in order to produce active spintron...
In last decade the process of spin relaxation of conduction electrons in semiconductor structures ha...
The spins of phosphorus doped in silicon are potential candidates for a quantum computing device, w...
Supersaturated solutions of phosphorus in silicon were obtained by ion implantation and pulsed ruby ...
Recently, electrical injection of spin polarization in n-type and p-type silicon has been experiment...
In recent years, a variety of solid-state qubits has been realized, including quantum dots, supercon...
In this work we show that the cooling rate following a platinum diffusion strongly influences the e...
The EPR properties of phosphorus-doped, silicon samples were investigated through the temperature r...