Add to ORKGAbstract: This paper targets to show feasibility of a three-dimensional process simulation flow in the context of optimization of the device design. Technology CAD (TCAD) simulation tools are used for the development of SOI-based 65 nm node triple-gate raised source/drain FinFET devices. The aim of this work is to implement a complete FinFET process flow in a commercially available 3D process simulation environment and then analyzing the DC and RF behavior of the resulting device
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
MOSFETs with multiple gate structures, such as 3-D FinFETs have seen enormous interest for sub-22 nm...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
In this paper, the performance variations of tri-gate FinFET are analyzed for different fin shapes a...
To continue the scaling of CMOS technology to 65 nm node and beyond, FinFET double-gate device struc...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
Coupled three-dimensional process and device simulations have been applied to study effects limiting...
This paper presents an investigation on properties of Double Gate FinFET (DG-FinFET) and impact of p...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind ...
With technology scaling, innovative approaches in the device design are increasingly being explored....
A simulation based design evaluation is reported for SOI FinFETs at 22nm gate length. The impact of ...
These last years, the triple-gate fin field-effect transistor (FinFET) has appeared as attractive ca...
In this work the corner effect sensitivity to fin geometry variation in multifin dual and tri-gate S...
In this work the corner effect sensitivity to fin geometry variation in multifin dual and tri-gate S...
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
MOSFETs with multiple gate structures, such as 3-D FinFETs have seen enormous interest for sub-22 nm...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
In this paper, the performance variations of tri-gate FinFET are analyzed for different fin shapes a...
To continue the scaling of CMOS technology to 65 nm node and beyond, FinFET double-gate device struc...
An SOI MOSFET with FINFET structure is simulated using a 3-D simulator. I-V characteristics and sub-...
Coupled three-dimensional process and device simulations have been applied to study effects limiting...
This paper presents an investigation on properties of Double Gate FinFET (DG-FinFET) and impact of p...
Technology scaling below 22 nm has brought several detrimental effects such as increased short chann...
Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind ...
With technology scaling, innovative approaches in the device design are increasingly being explored....
A simulation based design evaluation is reported for SOI FinFETs at 22nm gate length. The impact of ...
These last years, the triple-gate fin field-effect transistor (FinFET) has appeared as attractive ca...
In this work the corner effect sensitivity to fin geometry variation in multifin dual and tri-gate S...
In this work the corner effect sensitivity to fin geometry variation in multifin dual and tri-gate S...
The intensive downscaling of MOS transistors has been the major driving force behind the aggressive ...
MOSFETs with multiple gate structures, such as 3-D FinFETs have seen enormous interest for sub-22 nm...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...