ii In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
Electron transport properties of bulk GaN are presented based on full band ensemble Monte Carlo tech...
With the renewed concept of "Materials by Design" attracting particular attentions from the engineer...
Novel devices incorporating multiple layers of new materials increase the complexity of device struc...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
Monte Carlo lattice configuration snapshots used to produce the results in the paper "Melting of gen...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Cu...
In this book, Applications of Monte Carlo Method in Science and Engineering, we further expose the b...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
Materials modeling provides a cost and time efficient method for studying their properties, especial...
Monte Carlo (MC) technique allows solving mathematical and physical problems of great complexity. On...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...
During the work with this master's thesis a number of improvements have been made to the Monte Carlo...
Electron transport properties of bulk GaN are presented based on full band ensemble Monte Carlo tech...
With the renewed concept of "Materials by Design" attracting particular attentions from the engineer...
Novel devices incorporating multiple layers of new materials increase the complexity of device struc...
This paper discusses the various hierarchy levels that are possible when the full band structure is ...
Monte Carlo lattice configuration snapshots used to produce the results in the paper "Melting of gen...
A 3D parallel full band ensemble Monte Carlo device simulator is developed for simulation of nano sc...
A windows-based simulation program using Borland C++, named Dynamical Simulation of X-ray Rocking Cu...
In this book, Applications of Monte Carlo Method in Science and Engineering, we further expose the b...
The metal-semiconductor contact including the quantum mechanical tunneling effect is simulated by th...
Materials modeling provides a cost and time efficient method for studying their properties, especial...
Monte Carlo (MC) technique allows solving mathematical and physical problems of great complexity. On...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
A practical computer simulation of the network models of amorphous semiconductors, us-ing the Monte-...
Abs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sent...