Abstract. Anisotropic wet chemical etching of quartz is a bulk micromachining process for the fabrication of Micro-Electro-Mechanical Systems (MEMS), such as resonators and temperature sensors. Despite the success of the Continuous Cellular Automaton (CCA) for the simulation of wet etching of silicon, the simulation of the same process for quartz has received little attention –especially from an atomistic perspective – resulting in a lack of accurate modeling tools. This paper analyzes the crystallographic structure of the main surface orientations of quartz and proposes a novel classification of the surface atoms as well as an Evolutionary Algorithm (EA) to determine suitable values for the corresponding atomistic removal rates. Not only t...
A more refined 3D cellular Automata (CA) algorithm has been developed which has increased the resolu...
This report is about cellular automaton models in materials science. It gives an introduction to the...
Presently, dynamic surface-based models are required to contain increasingly larger numbers of point...
An evolutionary algorithm is presented for the automated calibration of the continuous cellular auto...
An evolutionary algorithm is presented for the automated calibration of the continuous cellular auto...
This study combines wet etching experiments and Kinetic Monte Carlo simulations to describe anisotro...
Based on the previous studies of the etch rate of crystalline silicon in alkaline etchants, we stres...
15 páginas, 9 figuras.-- et al.-- El pdf es la versión pre-print.The current success of the continuo...
Based on the previous studies of the etch rate of crystalline silicon in alkaline etchants, we stres...
We combine experiments and simulations to study the acceleration of anisotropic etching of crystalli...
The aim of this study is to devise a computer simulation tool, which will speed-up the design of Mic...
We present a method to describe the orientation dependence of the etch rate in anisotropic etching s...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
An atomistic model for the simulation of anisotropic wet chemical etching of crystalline silicon is ...
This paper presents a comprehensive analysis of the transient (short-term) and stable (long-term) cr...
A more refined 3D cellular Automata (CA) algorithm has been developed which has increased the resolu...
This report is about cellular automaton models in materials science. It gives an introduction to the...
Presently, dynamic surface-based models are required to contain increasingly larger numbers of point...
An evolutionary algorithm is presented for the automated calibration of the continuous cellular auto...
An evolutionary algorithm is presented for the automated calibration of the continuous cellular auto...
This study combines wet etching experiments and Kinetic Monte Carlo simulations to describe anisotro...
Based on the previous studies of the etch rate of crystalline silicon in alkaline etchants, we stres...
15 páginas, 9 figuras.-- et al.-- El pdf es la versión pre-print.The current success of the continuo...
Based on the previous studies of the etch rate of crystalline silicon in alkaline etchants, we stres...
We combine experiments and simulations to study the acceleration of anisotropic etching of crystalli...
The aim of this study is to devise a computer simulation tool, which will speed-up the design of Mic...
We present a method to describe the orientation dependence of the etch rate in anisotropic etching s...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
An atomistic model for the simulation of anisotropic wet chemical etching of crystalline silicon is ...
This paper presents a comprehensive analysis of the transient (short-term) and stable (long-term) cr...
A more refined 3D cellular Automata (CA) algorithm has been developed which has increased the resolu...
This report is about cellular automaton models in materials science. It gives an introduction to the...
Presently, dynamic surface-based models are required to contain increasingly larger numbers of point...