Capacitor properties were studied using a special test mask. We derived improved measurement and test capacitor and cell design. We saw a small perimeter scaling as well as the usual area scaling. Time dependent dielectric breakdown was extensively studied. We determined that the 4V/sec breakdown voltage is a sound figure of merit for that, and that nitride deposition conditions can be tuned for better TDDB performance, important for medium voltage applications. Capacitor nitrides as thin as 25 nm were seen to be feasible. 1
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...
Copper interconnect scaling is becoming more and more challenging for each new technology node. The...
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of t...
We present ramped voltage data from a new nitride used in our fabrication process. Using the same fa...
Abstract-A single GaAs MMIC fabrication flow produces three different types of silicon nitride capac...
In this paper we report room temperature constant voltage life-time measurements of silicon nitride ...
We have implemented a process monitor for defects in the silicon nitride deposition sub-process of a...
n this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N...
Future MIM capacitor generations will require significantly increased specific capacitances by utili...
Silicon nitride thin film dielectrics are used in capacitive radio frequency micro-electromechanical...
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN...
Monolithically integrated RC-snubbers were realized by metal-insulator-semiconductor capacitors on a...
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0C operati...
We have developed and characterized an ultra-thin 600 Å silicon nitride high-density MIM capacitor f...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...
Copper interconnect scaling is becoming more and more challenging for each new technology node. The...
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of t...
We present ramped voltage data from a new nitride used in our fabrication process. Using the same fa...
Abstract-A single GaAs MMIC fabrication flow produces three different types of silicon nitride capac...
In this paper we report room temperature constant voltage life-time measurements of silicon nitride ...
We have implemented a process monitor for defects in the silicon nitride deposition sub-process of a...
n this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N...
Future MIM capacitor generations will require significantly increased specific capacitances by utili...
Silicon nitride thin film dielectrics are used in capacitive radio frequency micro-electromechanical...
Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN...
Monolithically integrated RC-snubbers were realized by metal-insulator-semiconductor capacitors on a...
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0C operati...
We have developed and characterized an ultra-thin 600 Å silicon nitride high-density MIM capacitor f...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack m...
Copper interconnect scaling is becoming more and more challenging for each new technology node. The...
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of t...