One-dimensional Models for Diffusion and Segregation of Boron and for Ion Implantation of Aluminum in 4H-Silicon Carbide 29 X One-dimensional Models for Diffusion and Segregation of Boron and for Ion Implantation of Aluminum in 4H-Silicon Carbide

Silicon carbide with a poly-type 4H structure (4H-SiC) is an attractive material for power devices. While bipolar devices mainly utilize 4H-SiC p-n junctions, unipolar devices use p-n junctions both within the active region (to control the electric field distribution) and at the edges of the devices (to reduce electric-field crowding) (Baliga, 2005). In a p-type region