In this paper we present a continuous surface model to describe the interconnect geometric variation, which improves the currently used model for better accuracy while not increasing the number of variables. Based on it, efficient techniques are presented for chip-level capacitance extraction considering the window technique. The sparse-grid-based Hermite polynomial chaos combined with a novel weighted principle factor analysis is employed for intra-window extraction. Then, the inter-window capacitance covariance is calculated through matrix pseudo inverse. Numerical results validate the accuracy and efficiency of the proposed method, which is more than 50 times faster than the Monte-Carlo simulation with 10000 samples
We present an algorithm for two- and three-dimensional capacitance analysis on multidielectric integ...
VLSI interconnect capacitance is becoming more significant and also increasingly subject to process v...
Abstract—Lithographic limitations and manufacturing uncer-tainties are resulting in fabricated shape...
In this paper we present a continuous surface model to describe the interconnect geometric variation...
An efficient method is proposed to consider the process variations with spatial correlation, for chi...
Abstract – In this paper, a new geometric variation model, referred to as the improved continuous su...
Interconnects are an important constituent of any large scale integrated circuit, and accurate inter...
In this paper, a Spectral Stochastic Collocation Method (SSCM) is proposed for the capacitance extra...
In this paper we present a stochastic model order reduction technique for interconnect extraction in...
This paper presents a highly efficient sensitivity-based method for capacitance extraction, which mo...
Abstract — This paper presents a highly efficient sensitivity-based method for capacitance extractio...
With each new generation of IC process technologies, the impact of manufacturing variability is incr...
This paper presents a parallel and incremental solver for stochastic capacitance extraction. The ran...
This paper presents an effective approach to variability analysis of integrated capacitors due to ma...
Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, p...
We present an algorithm for two- and three-dimensional capacitance analysis on multidielectric integ...
VLSI interconnect capacitance is becoming more significant and also increasingly subject to process v...
Abstract—Lithographic limitations and manufacturing uncer-tainties are resulting in fabricated shape...
In this paper we present a continuous surface model to describe the interconnect geometric variation...
An efficient method is proposed to consider the process variations with spatial correlation, for chi...
Abstract – In this paper, a new geometric variation model, referred to as the improved continuous su...
Interconnects are an important constituent of any large scale integrated circuit, and accurate inter...
In this paper, a Spectral Stochastic Collocation Method (SSCM) is proposed for the capacitance extra...
In this paper we present a stochastic model order reduction technique for interconnect extraction in...
This paper presents a highly efficient sensitivity-based method for capacitance extraction, which mo...
Abstract — This paper presents a highly efficient sensitivity-based method for capacitance extractio...
With each new generation of IC process technologies, the impact of manufacturing variability is incr...
This paper presents a parallel and incremental solver for stochastic capacitance extraction. The ran...
This paper presents an effective approach to variability analysis of integrated capacitors due to ma...
Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, p...
We present an algorithm for two- and three-dimensional capacitance analysis on multidielectric integ...
VLSI interconnect capacitance is becoming more significant and also increasingly subject to process v...
Abstract—Lithographic limitations and manufacturing uncer-tainties are resulting in fabricated shape...