This extended abstract addresses a saw defects, the severe backside chipping, when cutting GaAs devices. The author reveals the mechanism of saw blade early failure mode and provides a solution: chemical refreshing saw blade instead of mechanical dressing. This solution improves sawing quality, fully automatic saw throughput, and reduces consumable cost of saw blades. In general, this concept is applicable to improving the cutting of other fragile semiconductor materials as well. THE PURPOSE OF THE WORK Backside chipping is one of major technical challenge when cutting GaAs devices [1]. The project was designed to address the constraints (severe backside chipping) still commonly experienced even in latest improvements
A backside dry-etching process has been developed to completely remove the GaAs substrate and expose...
The comparative investigation of two chemical polishing methods as applied to GaAs substrates is car...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
An issue of high relevance in the production of semiconductor wafers is the enhancement of the cryst...
This project is backside chipping improvement of non- backcoated bare die device for mobile applicat...
The paper presented a technical study on laser (light amplification by stimulated emission of radiat...
In recent years, the pursuit of improving the wafer strength after thinning step has been an on goin...
GaAs devices in our factory employ through wafer via technology. Since the wafers are electrically t...
Bandsawing is an important operation in a variety of industries particularly steel suppliers, which ...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
Chipping free is a dream for wafer sawing process. With current high complexity of wafer technology ...
AbstractCompound semiconductor fabrication processes deal with materials that can vary greatly in ha...
The dramatic increase in demand for GaAs based pHEMT and HBT devices has required the expansion of w...
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor su...
Gallium Arsenide (GaAs) continues to remain a material of significant importance due to being a pref...
A backside dry-etching process has been developed to completely remove the GaAs substrate and expose...
The comparative investigation of two chemical polishing methods as applied to GaAs substrates is car...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
An issue of high relevance in the production of semiconductor wafers is the enhancement of the cryst...
This project is backside chipping improvement of non- backcoated bare die device for mobile applicat...
The paper presented a technical study on laser (light amplification by stimulated emission of radiat...
In recent years, the pursuit of improving the wafer strength after thinning step has been an on goin...
GaAs devices in our factory employ through wafer via technology. Since the wafers are electrically t...
Bandsawing is an important operation in a variety of industries particularly steel suppliers, which ...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
Chipping free is a dream for wafer sawing process. With current high complexity of wafer technology ...
AbstractCompound semiconductor fabrication processes deal with materials that can vary greatly in ha...
The dramatic increase in demand for GaAs based pHEMT and HBT devices has required the expansion of w...
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor su...
Gallium Arsenide (GaAs) continues to remain a material of significant importance due to being a pref...
A backside dry-etching process has been developed to completely remove the GaAs substrate and expose...
The comparative investigation of two chemical polishing methods as applied to GaAs substrates is car...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...