R. van Langevelde

integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model 11 (MM11), the successor of MOS Model 9. MM11 not only gives an ac-curate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higher-order derivatives. In other words it gives an accurate description of MOS-FET distortion behaviour, and as such MM11 is suitable for digital, analog as well as RF circuit design. MOS Model 11 is a symmetrical, surface-potential-based model. It in-cludes an accurate description of all physical effects important for modern and future CMOS technologies, such as e.g. gate tunnelling current, influ-ence of pocket implants, poly-depletion, quantum-mechanical effects and bias-dependent overlap capacitances. The goal of this report is to present the full definition of the model, in-cluding the parameter set, the geometrical and temperature scaling rules