W-Band InP HEMT MMIC’s Using Finite-Ground Coplanar Waveguide (FGCPW) Design

Abstract—In this paper, we report on the development of W-band monolithic microwave integrated circuit (MMIC) power amplifiers using 0.1-m AlInAs/GaInAs/InP high electron mo-bility transistor (HEMT) technology and finite-ground coplanar waveguide (FGCPW) designs. In the device modeling, the Angelov nonlinear HEMT model was employed to predict the large signal performance of the device, and the results were validated by using state-of-the-art vector load-pull measurements. A two-stage single-ended W-band FGCPW MMIC using a 150-m-wide HEMT as the driver and a 250-m-wide HEMT for the output stage was designed, fabricated, and tested. The MMIC amplifier demonstrates a maximum output power of 18.6 dBm with 18.2% power-added efficiency and 10.6 dB associated gain at 94 GHz. This result is the best output power to date reported from an InP-based MMIC using FGCPW design at this frequency. Index Terms—Amplifier, coplanar waveguide (CPW), mono-lithic microwave integrated circuit (MMIC). I